RU6085M n-channel advanced power mosfet features pin description ? 60v/80a, r ds (on) =6m ? (typ.)@v gs =10v r ds (on) =6.5m ? (typ.)@v gs =4.5v ? super high dense cell design ? ultra low on-resistance ? fast switching speed ? lead free and green devices available (rohs compliant) pdfn5060 applications ? power management. ? switch applications. ? load switch. n-channel mosfet absolute maximum ratings symbol parameter rating unit common ratings (t c =25c unless otherwise noted) v dss drain-source voltage 60 v v gss gate-source voltage 20 t j maximum junction temperature 150 c t stg storage temperature range -55 to 150 c i s diode continuous forward current t c =25c 50 a mounted on large heat sink i dp 300 s pulse drain current tested t c =25c 320 a i d continuous drain current@t c (v gs =10v) t c =25c 80 a t c =100c 50 continuous drain current@t a (v gs =10v) t a =25c 21 t a =70c 16 p d maximum power dissipation@t c t c =25c 62.5 w t c =100c 25 maximum power dissipation@t a t a =25c 4.2 t a =70c 2.7 ruichips semiconductor co., ltd rev. a? sept., 2016 1 www.ruichips.com s s s g d d d d pin1 pin1 d s g
RU6085M symbol parameter rating unit r ? jc thermal resistance-junction to case 2 c/w r ? ja thermal resistance-junction to ambient 30 c/w drain-source avalanche ratings e as avalanche energy, single pulsed 196 mj electrical characteristics (t c =25c unless otherwise noted) symbol parameter test condition RU6085M unit min. typ. max. static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250a 60 v i dss zero gate voltage drain current v ds =60v, v gs =0v 1 a t j =125c 30 v gs(th) gate threshold voltage v ds =v gs , i ds =250a 1 2.5 v i gss gate leakage current v gs =20v, v ds =0v 100 na r ds(on) drain-source on-state resistance v gs =4.5v, i ds =35a 6 7 m ? v gs =10v, i ds =50a 6.5 8 m ? diode characteristics v sd diode forward voltage i sd =50a, v gs =0v 1.2 v t rr reverse recovery time i sd =50a, dl sd /dt=100a/s 38 ns q rr reverse recovery charge 72 nc dynamic characteristics r g gate resistance v gs =0v,v ds =0v,f=1mhz 1.2 ? c iss input capacitance v gs =0v, v ds =30v, frequency=1.0mhz 3450 pf c oss output capacitance 310 c rss reverse transfer capacitance 115 t d(on) turn-on delay time v dd =30v,i ds =50a, v gen =10v,r g =4.7 ? 28 ns t r turn-on rise time 32 t d(off) turn-off delay time 98 t f turn-off fall time 68 gate charge characteristics q g total gate charge v ds =48v, v gs =10v, i ds =50a 75 nc q gs gate-source charge 19 q gd gate-drain charge 26 ruichips semiconductor co., ltd rev. a? sept., 2016 2 www.ruichips.com
RU6085M notes: max current is limited to 50a by the package. pulse width limited by safe operating area. when mounted on 1 inch square copper board, t 10sec. limited by tjmax, ias =28a, vdd =24v, rg = 50 , starting tj = 25c. pulse test ; pulse width300s, duty cycle2%. guaranteed by design, not subject to production testing. ordering and marking information device marking package packaging qua ntity reel size tape width RU6085M RU6085M pdfn5060 tape&reel 3000 13'' 12mm ruichips semiconductor co., ltd rev. a? sept., 2016 3 www.ruichips.com
RU6085M typical characteristics ruichips semiconductor co., ltd rev. a? sept., 2016 4 www.ruichips.com vgs=10v ids=50a 10s 100s 1ms dc r ds(on) limited t c =25c single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc =2 c/w
RU6085M typical characteristics ruichips semiconductor co., ltd rev. a? sept., 2016 5 www.ruichips.com 2v 3v 5v vgs=8,9,10v 10v v gs =10v i ds =50a t j =25c rds(on)=6m ? t j =25c t j =150c ciss coss crss frequency=1.0mhz vds=48v ids=50a 4.5v
RU6085M avalanche test circuit and waveforms switching time test circuit and waveforms ruichips semiconductor co., ltd rev. a? sept., 2016 6 www.ruichips.com
RU6085M package information ruichips semiconductor co., ltd rev. a? sept., 2016 7 www.ruichips.com pdfn5060 min nom max min nom max a 0.90 1.00 1.10 0.035 0.039 0.043 b 0.33 0.42 0.51 0.013 0.017 0.020 c 0.20 0.25 0.30 0.008 0.010 0.012 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.61 3.79 3.96 0.142 0.149 0.156 e 5.90 6.00 6.10 0.232 0.236 0.240 e1 5.65 5.75 5.85 0.222 0.226 0.230 e2 3.38 3.58 3.78 0.133 0.141 0.149 e h 0.41 0.51 0.61 0.016 0.020 0.024 k 1.10 0.043 l 0.51 0.61 0.71 0.020 0.024 0.028 l1 0.06 0.13 0.20 0.002 0.005 0.008 a 0 12 0 12 1.27 bsc 0.005 bsc symbol mm inch a d 1 d 2 h e 2 k l l 1 b e l 1 e e 1 a c 0 . 0 4 r e f l a n d p a t t e r n o n l y f o r r e f e r e n c e 6 . 6 1 4 . 3 2 4 . 4 2 1 . 2 7 3 . 9 1 3 . 8 1 4 . 5 2 1 . 2 7 1 . 2 0 r e f 0 . 6 1
RU6085M customer service ruichips semiconductor co., ltd rev. a? sept., 2016 8 www.ruichips.com worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shenzhen city ruichips semiconductor co.,ltd 4th floor, block 8, changyuan new material port, keyuan middle road, science & industry park,nansha district, shenzhen, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz@ruichips.com
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